Elpida Memory, a Japanese memory-chip maker, has started to produde 1-Gigabit and 512-Megabit DDR2 SDRAMs using 70-nanometer process technology in larger volumes. The manufacturing facility is situated at Hiroshima, Japan. The majority of Dynamic Random...
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Elpida Memory, a Japanese memory-chip maker, has started to produde 1-Gigabit and 512-Megabit DDR2 SDRAMs using 70-nanometer process technology in larger volumes. The manufacturing facility is situated at Hiroshima, Japan.
The majority of Dynamic Random Access Memory (DRAM) on the market today is manufactured on the 90nm process. The move to 70nm process technology enables speed increases to 800MHz and 1GHz and a reduction in chip size. The move also allows for incrementally more chips per DRAM wafer, which decreases per-unit manufacturing costs, as per a statement issued by the company.
At present, Elpida is also working with NEC and Oki to develop memory-packaging technology that places eight memory chips and one controller chip in a vertical stack, with 3D connections between the chips.
On the other hand, Samsung has also developed a one Gigabit (Gb) Mobile Dynamic Random Access Memory (DRAM) for mobile products, using 80nm process technology. The new chip, also known as low-power Double Data Rate (DDR) or synchronous DRAM, will be more cost effective than other high density mobile solutions and used for a wide range of handset applications as well as for digital still cameras, portable media players and portable gaming products, the company said in a statement.
According to the company, the monolithic 1Gb Mobile DRAM is a good choice for mobile applications over the double-die stack, 1Gb memory solution used today, as the electric current in the new chip drops 30 per cent.
The new 1Gb Mobile DRAM chip uses the same packaging technique as the 512Mb double-die stack 1Gb package, however it introduces a new temperature-sensing feature. This new temperature-compensated, self-refresh feature maximises the self-refresh cycle to reduce power drain in standby mode by 30 per cent over conventional memory chip designs, the company claimed.
The 1Gb Mobile DRAM chip is 20 per cent thinner than a multi-stack package of 512Mb dies, allowing a single high-density package solution of 1.5Gb or even 2Gb Mobile DRAM memory, for which market demand is expected to grow in 2007, as per officials of the company.
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